Y. Eugene Pak / 박유근
Office: Academic Building B623
1985, Ph.D., Stanford University, Mechanical Engineering
1982, M.S., Stanford University, Mechanical Engineering
1980, B.S., State University of New York (SUNY) at Buffalo, Mechanical Engineering
- 2019–Present, Teaching Professor, Department of Mechanical Engineering, SUNY Korea
- 2009–2018, Director, Institute of Nano Convergence, Advanced Institute of Convergence Technology, Seoul National University
- 2005–2009, Vice President, CTO Office, Samsung Electronics
- 2001–2004, BioMEMS Technology Leader, Biotechnology Team, Samsung Advanced Institute of Technology
- 1996–2001, Director, Micro Systems Lab, Samsung Advanced Institute of Technology
- 1994–1995, Research Associate Professor, Department of Mechanical Engineering, Stony Brook University
- 1985–1994, Senior Researcher, Applied Mechanics Group, Grumman Aerospace Corporate Research Center
- Theoretical & Computational Mechanics (Elastic Singularities and Configurational Forces)
- Multiscale Micro and Nanomechanics of Defects in Electronic Materials
- Molecular Dynamics and Monte Carlo Simulations of Space Radiation Effects
- BioMEMS, Single Molecule DNA Sequencing, Lab-on-a-Chip
- MEMS Sensors and Actuators
- Smart Materials and Structures
- Solid and Structural Mechanics, CAE/FEM
- Strategic Technology Planning
- MEC 260: Engineering Statics
- MEC 262: Engineering Dynamics
- MEC 410: Design of Machine Elements
- MEC 440: Mechanical Engineering Design
- MEC 455: Applied Stress Analysis
- MEC 536: Mechanics of Solids
Dr. Pak has been very active in both industrial and academic research in various nano and biotechnology areas including MEMS sensors & actuators, AFM-based nanostorage, micro fluidics-base cooling device, bioMEMS lab-on-a-chip, nanopore-based DNA sequencing, and bio implant mechanics to name a few. On the more academic side, he had done a pioneering work on the fracture mechanics of piezoelectric materials. The current research topic is on the multiscale nanomechanics of defects in electronic materials which involves stress and electric field calculations in multi quantum wells and quantum dots. To have a better understanding of how defects are formed and how they affect the optoelectronic properties, molecular dynamics (MD) simulations as well as quantum mechanical calculations are performed. With the recent commerical interest for space and interplanetary explorations, his current research efforts include space radiation effects on electronic devices. To this end, Monte Carlo and radiation damage simulations are performed along with the continuum and MD analyses for gallium nitride-based high electron mobility transistors (HEMTs).
Representative Research Grants:
NRF of Korea: “The development of defect mechanics-based multi-scale simulation techniques for reliability of high performance electronic devices in extreme environments,” PI, KW 500,000,000, 2014.7.1~ 2019.06.30 (60 months).
NRF of Korea: “The Development of Mechanics Analysis Models and Quantitative Estimation of Optoelectronic Performance for Improvement of Quantum Dot LED,” PI, KW 150,000,000, 2016.11.01~ 2019.10.31 (36 months).
NRF of Korea: “Prediction of Defects and Performance in Electronic Materials by Cosmic Radiation,” Participating Researcher, KW 220,000,000, 2017.04.01~2020.03.31 (36 months).
NRF of Korea: “Korea-India Joint Network Center for Computational Material Science,” Participating Researcher, KW 180,000,000, 2017.12.15~2020.12.14 (36 Months).
Representative Publications: [Google Scholar Link]
Seo, Y., Jung, G.-J., Kim, I.-H., Pak, Y. E., “Configurational Forces on Elastic Line Singularities,” Journal of Applied Mechanics, Vol. 85, 2018.
Mishra, D., Lee, S. H., Seo, Y., Pak, Y. E., “Modeling of stresses and electric fields in piezoelectric multilayer: Application to multi quantum wells,” AIP Advances, Vol. 7, p. 075306, 2017.
Yang, J., Pak, Y. E., Lee, T.-R., “Predicting bifurcation angle effect on blood flow in the microvasculature,” Microvascular Research, Vol. 108, pp. 22~28, July 4, 2016.
Mishra, D., Pak, Y. E., “Electroelastic fields for a piezoelectric threading dislocation in various growth orientations of gallium nitride,” European Journal of Mechanics A/Solids, Vol. 61, pp. 279~292, September 30, 2016.
Seo, S. Y., Yoo, S. S., Mishra, D., Park, S.-H., Pak, Y. E., “Exact piezoelectric solution for misfitted inclusion in finite spherical matrix: Applications to quantum dot core/shell crystals,” International Journal of Solids and Structures, Vol. 94-95, pp. 158~169, May 10, 2016.
Park, S.-H., Pak, Y. E., Park, C. Y., Mishra, D., Yoo, S.-H., Cho, Y.-H., Shim, M., and Kim, S., “Quaternary AlInGaN/InGaN quantum well on vicinal c-plane substrate for high emission intensity of green wavelengths,” Journal of Applied Physics, Vol. 117, p. 185707, 2015.
Mishra, D., Cho, Y.-H., Shim, M.-B., Hwang, S., Kim, S., Park, C. Y., Yoo, S.-H., Park, S.-H., Pak, Y. E., “Effect of piezoelectricity on critical thickness for misfit dislocation formation at InGaN/GaN interface,” Computational Materials Science, Vol. 97, pp. 254–262, 2015.
Seo, S. Y., Mishra, D., Park, C. Y., Yoo, S. H., Pak, Y. E., “Energy Release Rates for a Misffited Spherical Inclusion under Far-Field Mechanical and Uniform Thermal Loads,” European Journal of Mechanics A/Solid, Vol. 49, pp. 169-182, 2015.
Park, S.-H., Cho, Y.-H., Shim, M.-B., Kim, S., Park, C. Y., Pak, Y. E., Mishra, D., Yoo, S.-H., Kang, K., “Effects of Crystal Orientation on the Optical Gain Characteristics of Blue AlInGaN-InGaN Quantum-well Structures,” Journal of the Korean Physical Society, Vol. 65, No. 4, pp. 457~461, August 2014.
Park, S.-H., Mishra, D., Pak, Y. E., Kang K., Park, C. Y., Yoo, S.-H., Cho , Y.-H., Shim, M.-B., and Kim, S., “Polarization Characteristics of Semipolar (112-2) InGaN/GaN Quantum Well Structures Grown on Relaxed InGaN Substrate and Comparison with Experiment,” Optics Express, Vol. 22, No. S4, pp. A1023-A1152, June 30, 2014.
Lee, M. H., Lee, J. H., Kim, H. M., Kim, Y. R., Jeon, T. J., Pak, Y. E., Kim, K. B., “Leakage Current in a Si-based Nanopore Structure and its Influence on Noise Characteristics,” Microfluidics and Nanofluidics, Vol. 16, No. 1-2, pp. 123-130, 2014.
Park, J.-M., Chun, H., Pak, Y. E., Park, B.-G., and Lee, J.-H., Pak, Y. E., “Parameter Modeling for Nanopore Ionic FETs in 3-D Device Simulation,” Journal of Nanoscience and Nanotechnology, Vol. 14, pp. 8171–8175, 2014.